Search results for "Static testing"

showing 5 items of 5 documents

Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions

2016

International audience; The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of dynamic and static test modes as well as several stimuli on the error rate of this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry, with a possible effect due to fluence. Dynamic tests results show a high sensitivity of this memory to switching activity of this peripheral circuitry.

ImaginationNuclear and High Energy PhysicsHeavy ion radiationMaterials science130 nmmedia_common.quotation_subject[PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex]01 natural sciencesFluence[SPI]Engineering Sciences [physics]0103 physical sciencesStatic testingSensitivity (control systems)Electrical and Electronic Engineeringradiation testingSimulationmedia_common010302 applied physicssingle event upset (SEU)ta114ta213010308 nuclear & particles physicsbusiness.industrymultiple cell upset (MCU)FerroelectricityNon-volatile memoryRadiation testingFRAM130nm technologyNuclear Energy and EngineeringOptoelectronicsbusinessstatic and dynamic mode testingIEEE Transactions on Nuclear Science
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Heavy-Ion Radiation Impact on a 4Mb FRAM under Different Test Conditions

2015

The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of different test modes (static and dynamic) on this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry. Dynamic tests results show a high sensitivity of this memory to heavy-ions.

Ionizing radiation[PHYS]Physics [physics]010302 applied physicsRandom access memoryMaterials scienceHeavy ion radiationta114ta213010308 nuclear & particles physics01 natural sciencestest conditions[SPI.TRON]Engineering Sciences [physics]/ElectronicsNon-volatile memoryMultiple Cell Upset (MCU)FRAM0103 physical sciencesStatic testingElectronic engineeringSensitivity (control systems)radiation testing130nmSingle Event Upset (SEU)static and dynamic mode testingSimulation
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Damage Identification of Beams Using Static Test Data

2003

A damage identification procedure for beams under static loads is presented. Damage is modelled through a damage distribution function which determines a variation of the beam stiffness with respect to a reference condition. Using the concept of the equivalent superimposed deformation, the equations governing the static problem are recast in a Fredholm’s integral equation of the second kind in terms of bending moments. The solution of this equation is obtained through an iterative procedure as well as in closed form. The latter is explicitly dependent from the damage parameters, thus, it can be conveniently used to set-up a damage identification procedure. Some numerical results are present…

NoiseIdentification (information)Distribution functionDeformation (mechanics)Bending stiffnessMathematical analysisStatic testingBending momentIntegral equationMathematics
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Methodologies for the Statistical Analysis of Memory Response to Radiation

2016

International audience; Methodologies are proposed for in-depth statistical analysis of Single Event Upset data. The motivation for using these methodologies is to obtain precise information on the intrinsic defects and weaknesses of the tested devices, and to gain insight on their failure mechanisms, at no additional cost. The case study is a 65 nm SRAM irradiated with neutrons, protons and heavy ions. This publication is an extended version of a previous study.

Nuclear and High Energy PhysicsEngineeringHardware_PERFORMANCEANDRELIABILITYRadiation[PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex]01 natural sciencesstatistical analysis0103 physical sciencesStatic testingElectronic engineeringmemory responseStatistical analysisSensitivity (control systems)Static random-access memoryElectrical and Electronic Engineeringstatic testCluster of bit-flipsdynamic test010302 applied physicsSingle event upset SEURandom access memoryta114ta213010308 nuclear & particles physicsbusiness.industrymultiple cell upset (MCU)säteilySRAMReliability engineeringradiationNuclear Energy and EngineeringSingle event upsetradiation effectsbusiness[MATH.MATH-NA]Mathematics [math]/Numerical Analysis [math.NA]Dynamic testing
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Investigation on MCU Clustering Methodologies for Cross-Section Estimation of RAMs

2015

International audience; Various failure scenarios may occur during irradiation testing of SRAMs, which may generate different characteristic Multiple Cell Upset (MCU) error patterns. This work proposes a method based on spatial and temporal criteria to identify them.

Nuclear and High Energy PhysicsEngineeringcomputer.software_genreUpsetCross section (physics)Static testingCluster of bit flipsStatic random-access memoryElectrical and Electronic Engineeringradiation testingstatic testCluster analysisdynamic test[PHYS]Physics [physics]single event upset (SEU)ta213ta114Cross sectionbusiness.industrySEFImultiple cell upset (MCU)SRAM[SPI.TRON]Engineering Sciences [physics]/ElectronicsRAMRadiation testingMicrocontrollerMCUNuclear Energy and EngineeringSEU clusterData miningbusinesscomputerDynamic testing
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